Guggisberg, M. and Pfeiffer, O. and Schaer, S. and Barwich, V. and Bammerlin, M. and Loppacher, C. and Bennewitz, R. and Baratoff, A. and Meyer, E.. (2001) Contrast inversion in nc-AFM on Si(111)7 x 7 due to short-range electrostatic interactions. Applied physics. A, Materials science & processing, Vol. 72, Suppl. 1 , S19-S22.
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Official URL: http://edoc.unibas.ch/dok/A5262142
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Abstract
Contrast inversion in nc-AFM on Si(111)7 x 7 is observed at positive sample bias. Corner holes appear as protrusions and adatoms as holes. The application of negative bias voltages causes drastic changes in the atomic constrast. Frequency shift vs distance curves show evidence of short-range, voltage-dependent forces. These observations indicate that short-range electrostatic forces are important for atomic-scale contrast in nc-AFM.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer) |
|---|---|
| UniBasel Contributors: | Meyer, Ernst |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | Springer-Verlag |
| ISSN: | 1432-0630 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
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| Identification Number: |
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| Last Modified: | 22 Mar 2012 14:27 |
| Deposited On: | 22 Mar 2012 13:56 |
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