Meyer, E. and Howald, L. and Luthi, R. and Haefke, H. and Ruetschi, M. and Bonner, T. and Overney, R. and Frommer, J. and Hofer, R. and Guntheroidt, H. J.. (1994) Scanning probe microscopy on the surface of Si(111). Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement, and phenomena, Vol. 12, H. 3. pp. 2060-2063.
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Official URL: http://edoc.unibas.ch/dok/A5839492
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Abstract
An ultrahigh vacuum atomic force microscope, operated in the noncontact mode, is used to characterize n-doped Si(111) surfaces. Ionized impurities are observed with electrostatic forces, demonstrating contrast reversal by changing the polarity of the voltage between probing tip and sample. The impurities form one-dimensional domains on the silicon surface. Steps and lines, connecting kink sites, are preferentially occupied by these impurities.
| Faculties and Departments: | 05 Faculty of Science > Departement Physik > Physik > Nanomechanik (Meyer) |
|---|---|
| UniBasel Contributors: | Meyer, Ernst |
| Item Type: | Article, refereed |
| Article Subtype: | Research Article |
| Publisher: | American Vacuum Society |
| ISSN: | 1071-1023 |
| Note: | Publication type according to Uni Basel Research Database: Journal article |
| Identification Number: |
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| Last Modified: | 14 Sep 2012 07:18 |
| Deposited On: | 14 Sep 2012 06:43 |
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