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Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake

Kölbl, D. and Zumbühl, D. M.. (2012) Transport spectroscopy of disordered graphene quantum dots etched into a single graphene flake. arxiv.org [cond-mat.mes-hall]. p. 6.

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Official URL: http://edoc.unibas.ch/42711/

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Abstract

We present transport measurements on quantum dots of sizes 45, 60 and 80 nm etched with an Ar/O2-plasma into a single graphene sheet, allowing a size comparison avoiding effects from different graphene flakes. The transport gaps and addition energies increase with decreasing dot size, as expected, and display a strong correlation, suggesting the same physical origin for both, i.e. disorder-induced localization in presence of a small confinement gap. Gate capacitance measurements indicate that the dot charges are located in the narrow device region as intended. A dominant role of disorder is further substantiated by the gate dependence and the magnetic fieldbehavior, allowing only approximate identification of the electron-hole crossover and spin filling sequences. Finally, we extract a g-factor consistent with g=2 within the error bars.
Faculties and Departments:05 Faculty of Science > Departement Physik > Physik > Experimentalphysik Quantenphysik (Zumbühl)
UniBasel Contributors:Zumbühl, Dominik M
Item Type:Article
Article Subtype:Research Article
Note:Publication type according to Uni Basel Research Database: Journal article
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Last Modified:30 Jun 2016 11:04
Deposited On:23 May 2016 08:05

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