von Lilienfeld, O. Anatole and Schultz, Peter A.. (2008) Structure and band gaps of Ga-(V) semiconductors: The challenge of Ga pseudopotentials. Physical review B: Condensed matter and materials physics, 77 (11). p. 115202.
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Abstract
Design of gallium pseudopotentials has been investigated for use in density functional calculations of zinc-blende-type cubic phases of GaAs, GaP, and GaN. A converged construction with respect to all-electron results is described. Computed lattice constants, bulk moduli, and band gaps vary significantly depending on pseudopotential construction or exchange-correlation functional. The Kohn-Sham band gap of the Ga-(V) semiconductors exhibits a distinctive and strong sensitivity to lattice constant, with near-linear dependence of gap on lattice constant for larger lattice constants and Gamma-X crossover that changes the slope of the dependence. This crossover occurs at approximate to 98, 101, and 95% deviation from the equilibrium lattice constant for GaAs, GaP, and GaN, respectively.
Faculties and Departments: | 05 Faculty of Science > Departement Chemie > Former Organization Units Chemistry > Physikalische Chemie (Lilienfeld) |
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UniBasel Contributors: | von Lilienfeld, Anatole |
Item Type: | Article, refereed |
Article Subtype: | Research Article |
Publisher: | American Physical Society |
ISSN: | 1098-0121 |
e-ISSN: | 1550-235X |
Note: | Publication type according to Uni Basel Research Database: Journal article |
Language: | English |
Identification Number: | |
edoc DOI: | |
Last Modified: | 25 Jan 2017 13:15 |
Deposited On: | 25 Jan 2017 13:15 |
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